Redistribution of implanted dopants in GaN

Photothermal Activation of Shallow Dopants Implanted in Silicon

Dopant impurities were implanted at high dose and low energy (10 cm, 0.5–2.2 keV) into double-side polished 200 mm diameter silicon wafers and electrically activated to form p–n junctions by 10 s anneals at temperatures of 1,025, 1,050, and 1,075 C by optical heating with tungsten incandescent lamps. Activation was studied for P, As, B, and BF2 species implanted on one wafer side and for P and ...

Blistering of H-implanted GaN

Mechanisms of blistering of wurtzite GaN films implanted with H ions are studied. In particular, we report on the influence of the following parameters on the blistering process: ~i! ion energy ~from 20 to 150 keV!, ~ii! ion dose ~up to 1.2310 cm!, ~iii! implantation temperature ~from 2196 to 250 °C!, and ~iv! annealing temperature ~up to 900 °C!. Results show that both the onset of blistering ...

A Method to Improve Activation of Implanted Dopants in SiC

Implantation of dopant ions in SiC has evolved according to the assumption that the best electrical results (i.e., carrier concentrations and mobility) is achieved by using the highest possible processing temperature. This includes implantation at > 600°C followed by furnace annealing at temperatures as high as 1750°C. Despite such aggressive and extreme processing, implantation suffers because...

Cathodoluminescence depth profiling of ion-implanted GaN

Characterization of Ni-implanted GaN and SiC

High concentrations ( /10 cm ) of Ni were introduced into GaN and SiC by ion implantation at 350 8C. On subsequent annealing at 700 8C, there was more residual lattice damage in GaN compared to SiC. Both materials showed ferromagnetism with transition temperatures below 50 K. No secondary phases could be detected by transmission electron microscopy (TEM) or selected area diffraction in either G...